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The Samsung 990 EVO Plus is a powerful internal solid state drive designed to enhance storage performance with a 2 TB capacity. Featuring Samsung V-NAND TLC Technology, this drive ensures high-speed data transfer with an internal data rate of 7250 MBps and a write speed of 6300 MBps, enabling seamless operation for demanding applications and large file management. With support for PCI Express 4.0 and 5.0 interfaces, it meets various system requirements while offering speed and reliability.
Designed with advanced features such as Intelligent TurboWrite Technology and an Auto Garbage Collection Algorithm, the Samsung 990 EVO Plus maintains efficiency and durability even under heavy workloads. Its shock and vibration resistance capability of up to 1500 g and a temperature range from -40°C to 85°C makes it suitable for both consumer and professional environments. This SSD ensures quick data access and provides hardware encryption for enhanced security, making it an ideal choice for users looking to upgrade system performance.
Designed with advanced features such as Intelligent TurboWrite Technology and an Auto Garbage Collection Algorithm, the Samsung 990 EVO Plus maintains efficiency and durability even under heavy workloads. Its shock and vibration resistance capability of up to 1500 g and a temperature range from -40°C to 85°C makes it suitable for both consumer and professional environments. This SSD ensures quick data access and provides hardware encryption for enhanced security, making it an ideal choice for users looking to upgrade system performance.
Features
NVMe Version: 2.0
Supported security algorithms: 256-bit AES
SSD storage capacity: 2 TB
SSD form factor: M.2
Interface: PCI Express 4.0
NVMe: Yes
Memory type: V-NAND TLC
Component for: PC
Hardware encryption: Yes
M.2 SSD size: 2280 (22 x 80 mm)
Read speed: 7250 MB/s
Write speed: 6300 MB/s
Random read (4KB): 1,000,000 IOPS
Random write (4KB): 1,350,000 IOPS
DevSlp (device sleep) support: Yes
SMART Support: Yes
TRIM support: Yes
Mean time between failures (MTBF): 1,500,000 h
energy
Operating voltage: 3.3 V
Energy consumption (reading): 4.6 W
Energy consumption (writing): 4.2 W
Average power consumption (reading): 4.6 W
Average power consumption (writing): 4.2 W
Energy consumption (idle): 0.06 W
Power consumption DevSlp (device sleep): 5 mW
Weight and dimensions
Width: 80.2 mm
Depth: 2.38 mm
Height: 80.2 mm
Weight: 9 g
Operating conditions
Operating temperature: 0 - 70 °C
Impact resistance in operation: 1500 G
NVMe Version: 2.0
Supported security algorithms: 256-bit AES
SSD storage capacity: 2 TB
SSD form factor: M.2
Interface: PCI Express 4.0
NVMe: Yes
Memory type: V-NAND TLC
Component for: PC
Hardware encryption: Yes
M.2 SSD size: 2280 (22 x 80 mm)
Read speed: 7250 MB/s
Write speed: 6300 MB/s
Random read (4KB): 1,000,000 IOPS
Random write (4KB): 1,350,000 IOPS
DevSlp (device sleep) support: Yes
SMART Support: Yes
TRIM support: Yes
Mean time between failures (MTBF): 1,500,000 h
energy
Operating voltage: 3.3 V
Energy consumption (reading): 4.6 W
Energy consumption (writing): 4.2 W
Average power consumption (reading): 4.6 W
Average power consumption (writing): 4.2 W
Energy consumption (idle): 0.06 W
Power consumption DevSlp (device sleep): 5 mW
Weight and dimensions
Width: 80.2 mm
Depth: 2.38 mm
Height: 80.2 mm
Weight: 9 g
Operating conditions
Operating temperature: 0 - 70 °C
Impact resistance in operation: 1500 G

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