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The Samsung 9100 PRO MZ-VAP8T0 solid state drive offers a capacity of 8 TB, ensuring space for important files and applications. With an internal data rate of 14800 MBps and write speed of 13400 MBps, this SSD delivers performance for demanding tasks. Designed with Samsung V-NAND TLC Technology and Intelligent TurboWrite 2.0 Technology, it enhances data management and storage efficiency while maintaining performance under various conditions. Robustly built, the drive includes an integrated heatsink for effective thermal management, along with features such as TRIM support and an Auto Garbage Collection Algorithm to improve longevity and speed. The M.2 2280 form factor makes it suitable for a range of devices, including compatibility with PlayStation, all while featuring a durable design that withstands extreme temperatures and conditions. Experience increased storage reliability and performance with the Samsung 9100 PRO SSD.
Features
Supported security algorithms: 256-bit AES
SSD storage capacity: 8 TB
SSD form factor: M.2
Interface: PCI Express 5.0
Feature: NVMe
Memory type: V-NAND TLC
Component for: PC/Laptop
Feature: Hardware encryption
Read speed: 14800 MB/s
Write speed: 13400 MB/s
Random read (4KB): 2,200,000 IOPS
Random write (4KB): 2,600,000 IOPS
PCI Express interface data lanes: x4
Feature: DevSlp (device sleep) support
Feature: SMART support
Feature: TRIM support
Mean time between failures (MTBF): 1,500,000 h
energy
Operating voltage: 3.3 V
Weight and dimensions
Width: 80.2 mm
Depth: 3.88 mm
Height: 22.1 mm
Packaging data
Packaging type: Box
Operating conditions
Operating temperature: 0 - 70 °C
Impact resistance in operation: 1500 G
Other functions
Warranty period: 5 years
Supported security algorithms: 256-bit AES
SSD storage capacity: 8 TB
SSD form factor: M.2
Interface: PCI Express 5.0
Feature: NVMe
Memory type: V-NAND TLC
Component for: PC/Laptop
Feature: Hardware encryption
Read speed: 14800 MB/s
Write speed: 13400 MB/s
Random read (4KB): 2,200,000 IOPS
Random write (4KB): 2,600,000 IOPS
PCI Express interface data lanes: x4
Feature: DevSlp (device sleep) support
Feature: SMART support
Feature: TRIM support
Mean time between failures (MTBF): 1,500,000 h
energy
Operating voltage: 3.3 V
Weight and dimensions
Width: 80.2 mm
Depth: 3.88 mm
Height: 22.1 mm
Packaging data
Packaging type: Box
Operating conditions
Operating temperature: 0 - 70 °C
Impact resistance in operation: 1500 G
Other functions
Warranty period: 5 years
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